Invited Speakers
ICREM2019 (updated 15th Nov 2019) Accelerated particle beams
Prof Haiyang Lu, Peking University, Beijing, China
Positron injection and acceleration in laser driven wakefield
Prof Jonatan Slotte, Aalto University, Helsinki-Espoo, Finland
Vacancy defets in GaSb, Ge and GeSn studied with a combination of ion and positron beams
Prof Roger Webb, University of Surrey, Guildford, UK
SIMPLE – Single Ion Multispecies Positioning at Low Energy – A Single Ion Implanter for Quantum TechnologiesSIMPLE – Single Ion Multispecies Positioning at Low Energy – A Single Ion Implanter for Quantum Technologies
Prof Hiroyuki Hama, Tohoku University, Japan
Superconducting electron accelerators for various applications
Dr Yanwen Zhang, Oak Ridge National Lab, Oak Ridge, TN, USA
Radiation effects in high entropy alloys and other advanced structural alloys
Fundamentals of light-matter interaction
Prof Michael Reshchikov, Virginia Commonwealth University, USA
Thermal quenching mechanisms for defect-related luminescence in semiconductors
Prof Chi Chung (Francis) Ling, Hong Kong University, Hong Kong
Opto-magnetic properties of ZnO based materials
Prof Elzbieta Guziewicz, Instutute of Physics, Warsawa, Poland
Optics of the shallow donor and acceptor states in ZnO grown under O-rich and Zn-rich conditions
Prof Chih Chung Yang, National Taiwan University, Taiwan
Surface plasmon coupled light-emitting devices
Lasers and LEDs
Prof Motoaki Iwaya, Meijo University, Nagoya, Japan
Toward current injection AlGaN-based UV-B lasers using high quality relaxed AlGaN and polarization doping method
Prof Inhwan Lee, Korea University, Seoul, Korea
Highly flexible bio-compatible planar lighting source based on InGaN/GaN nanorod light-emitting diodes
Prof Eun-Soo Nam, Electronics and Telecommunications Research Institute, Daejeon, Korea
Crack-free AlGaN epi-layer on GaN templates for UV-Laser diodes via selective-area MOCVD
Prof Hiroshi Fujioka, The University of Tokyo, Tokyo, Japan
Preparation of high quality nitride films and devices with pulsed sputtering
Profs Osamu Oda and Masaru Hori, Center for Low Temperature Plasma Sciences (CPLS), Nagoya University, Nagoya, Japan.
Novel epitaxial growth methods for nitride semiconductors using plasma technology
Prof Jian Jang Huang, National Taiwan University, Taiwan
2 Gbit/s data rate transmission of LEDs with photonics crystals using OFDM
Photovoltaics
Prof Deren Yang, Zhejiang University, Hangzhou, China
Seed-assisted multicrystalline silicon for higher efficiency solar cells
Dr Xinyu Zhang, Jinko Solar, Haining, China
Ring-effects in mono-crystalline silicon solar cells: understaning and control
Prof Avner Rothschild, Technion, Haifa, Israel
Differentiating between mobile and non-mobile optically excited states in complex materials
IR and THz
Prof Shengqiang Zhou, Helmholtz-Zentrum Dresden-Rossendorf, Germany
Extended room-temperature infrared photoresponse in hyperdoped Si by ion implantation
Prof Arnel Salvador, The University of Philippines Diliman, Phillippines
THz spectra of the tensile and compressive strained epitaxially lifted-off GaAs films
Radiation detection and devices
Dr David Rogers, Nanovation, Châteaufort, France
Radiation hard oxide materials for new space photonics applications
Prof Jiandong Ye, Nanjing University, Nanjing, China
Solar-blind photodetectors based on Ga2O3 materials
Prof Henry Radamson, Institute of Microelectronics, CAS, Beijing, China
Challenges of nano-scale transistor processing
Prof Takayuki Uchida, Tokyo Polytechnic University, Japan
SMART WINDOW WITH LIGHT EMISSION, TRANSPARENT AND MIRROR STATE; STUDY OF NOVEL LIGHT EMITTING DEVICES FOR FURTHER OLEDs PROGRESS
Prof Harry J. Whitlow, Louisiana Accelerator Center, Univeristy of Louisiana at Lafayette, USA
Application of µ-PIXE studies of identification of HIV/SIV infection
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